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List of bibliographic references

Number of relevant bibliographic references: 278.
[0-50] [0 - 20][0 - 50][50-70]
Ident.Authors (with country if any)Title
000392 (2013) Synthesis, crystal structure and magnetic properties of Li2InMo3O8: A novel reduced molybdenum oxide containing magnetic Mo3 clusters
000842 (2013) New ternary indide La2Pd3In4
000844 (2013) New chalcogenide glasses in the GeSe2-Ga2Se3-In2Se3 and GeSe2-Ga2Se3-PbSe domains
000905 (2013) Micro-characterization and three dimensional modeling of very large waveguide arrays by selective area growth for photonic integrated circuits
001035 (2013) Comparison of the Microwave Performance of Transparent Wire Monopole Antennas Based on Silver Films
001233 (2013) 70 GSa/s and 51 GHz bandwidth track-and-hold amplifier in InP DHBT process
002093 (2012) A gradual annealing of amorphous sputtered indium tin oxide: Crystalline structure and electrical characteristics
002519 (2011) Sputtered hydrogenated amorphous silicon thin films for distributed Bragg reflectors and long wavelength vertical cavity surface emitting lasers applications
002A57 (2011) Low noise Raman lasers for yellow-orange spectrum coverage
003A36 (2010) QD laser on InP substrate for 1.55 μm emission and beyond
003B35 (2010) Performance of InAsSb-based Infrared Detectors with nBn Design
004468 (2010) Development of New Localized Surface Plasmon Resonance Interfaces Based on Gold Nanostructures Sandwiched between Tin-Doped Indium Oxide Films
004695 (2010) Analysis of carriers dynamics and laser emission in 1.55 μm InAs/InP(113)B quantum dot lasers
004941 (2009) Theoretical analysis of 1.55-μm InAs/InP (113B) quantum dot lasers based on a multi-population rate equation model
004B31 (2009) Structural, magnetic and electrical properties of (La0.70-xNdx)Sr0.30Mn0.70Cr0.30O3 with 0≤x≤0.30
004B81 (2009) Spectral Analysis of 1.55-μm InAs-InP(113)B Quantum-Dot Lasers Based on a Multipopulation Rate Equations Model
005226 (2009) InAs QDs on InP: polarization insensitive SOA and non-radiative Auger processes
005662 (2009) Effect of bath temperature and annealing on the formation of CuInSe2
005736 (2009) Design of an InGaAs/InP 1.55 μm electrically pumped VCSEL
005787 (2009) Critical thickness for InAs quantum dot formation on (311)B InP substrates
005B76 (2008) Theoretical study of highly strained InAs material from first-principles modelling : application to an ideal QD
005E72 (2008) Seed-mediated electrochemical growth of gold nanostructures on indium tin oxide thin films
006123 (2008) Optical and structural properties of new chalcohalide glasses
006368 (2008) Lasing spectra of 1.55 pm InAs/InP quantum dot lasers : theoretical analysis and comparison with the experiments
006F07 (2007) The crystal structure of Ce16Ru8In37
007114 (2007) Single crystal investigation of the ternary indides Ce2Pd4In5 and CePdIn4
007D14 (2007) Crystal structure of the new ternary compound Ce3Ru2In3
007E00 (2007) Characterization of InAs quantum wires on (001)InP : Toward the realization of VCSEL structures with a stabilized polarization
007E21 (2007) Ce2Ru2In3 and Ce3Ru2In2 : Site exchange in ternary indides of a new structure type
007E98 (2007) Anisotropic and inhomogeneous Coulomb screening in the Thomas-Fermi approximation : Application to quantum dot-wetting layer system and Auger relaxation
007F02 (2007) Analysis of the double laser emission occurring in 1.55-μm InAs-InP (113)B quantum-dot lasers
007F42 (2007) Advanced component technologies for colourless access networks
008004 (2007) 1516 nm room temperature CW operation of quantum dot InAs/InP(311)B singlemode laser
008016 (2006) Étude en température d'un laser à un seul plan de boîtes quantiques d'InAs sur substrat InP émettant à 1,55μm
008017 (2006) Structures à îlots quantiques sur substrat InP(100) pour l'émission dans le moyen infrarouge (2-5μm)
008018 (2006) Régime impulsionnel 300fs, 100 pJ, autodémarrant généré par un laser à fibre Er3+ avec absorbant saturable InGaAs/InP dopés fer ultrarapide
008019 (2006) Réalisation d'un laser à faible courant de seuil, avec des boites quantiques InAs/InP organisées et couplées latéralement
008021 (2006) Génération d'impulsions courtes dans un laser à fibre dopée erbium grâce à la combinaison d'un absorbant saturable rapide et d'effets de polarisation
008332 (2006) Structure and thermal behaviour of ScK(C2O4)2(H2O)2 and InRb1-x(H3O)x(C2O4)2(H2O)2.0.5(H2O) : Two members of a family of open-framework oxalates with isotypic helical structures and zeolite-like properties
008418 (2006) Single crystal investigation of Ce6Pd12In5
008456 (2006) Self-assembled InAs quantum dots grown on InP (311)B substrates : Role of buffer layer and amount of InAs deposited
008965 (2006) Interface formation and structural properties of iron films on Al0.48In0.52As (001)
008C63 (2006) Erbium-doped fiber laser passively Q-switched by an InGaAs/InP multiple quantum well saturable absorber
009020 (2006) Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers
009710 (2005) Polarization sensitivity characterization under normal incidence of a multiple quantum wells saturable absorber nonlinear mirror as a function of the temperature of the chip
009817 (2005) Optical properties of Yb3+ ions in halogeno-sulphide glasses
009930 (2005) Molecular beam epitaxy growth of quantum dot lasers emitting around 1.5μm on InP(311)B substrates
009959 (2005) Micro-lens on polarization maintaining fibre for coupling with 1.55 μm quantum dot devices
009E47 (2005) Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates
00A134 (2005) Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection
00A706 (2004-03-15) Electron-acoustic phonon interaction in a single quantum dots layer: Acoustic mirror and cavity effects

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